Optical characterization of CuIn1-xGaxSe2 alloy thin films by spectroscopic ellipsometry
Identifieur interne : 00C167 ( Main/Repository ); précédent : 00C166; suivant : 00C168Optical characterization of CuIn1-xGaxSe2 alloy thin films by spectroscopic ellipsometry
Auteurs : RBID : Pascal:03-0315257Descripteurs français
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- 7866L, 7820C, 0760F, 7840F, 6855J, 7830H, Etude expérimentale, Cuivre composé, Indium composé, Gallium composé, Semiconducteur ternaire, Couche mince semiconductrice, Diffraction RX, Ellipsométrie, Indice réfraction, Revêtement déposé sous vide, Spectre visible, Spectre IR, Spectre UV, Topographie surface.
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Abstract
Optical constants of polycrystalline thin film CuIn1-xGaxSe2 alloys with Ga/(Ga+In) ratios from 0 to 1 have been determined by spectroscopic ellipsometry over an energy range of 0.75-4.6 eV. CuIn1-xGaxSe2 films were deposited by simultaneous thermal evaporation of elemental copper, indium, gallium and selenium. X-ray diffraction measurements show that the CuIn1-xGaxSe2 films are single phase. Due to their high surface roughness, the films are generally not suitable for ellipsometer measurements. A method is presented in which spectroscopic ellipsometer measurements were carried out on the reverse side of the CuIn1-xGaxSe2 films immediately after peeling them from Mo-coated soda lime glass substrates. A detailed description of multilayer optical modeling of ellipsometric data, generic to ternary chalcopyrite films, is presented. Accurate values of the refractive index and extinction coefficient were obtained and the effects of varying Ga concentrations on the electronic transitions are presented. © 2003 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Optical characterization of CuIn<sub>1-x</sub>Ga<sub>x</sub>Se<sub>2</sub> alloy thin films by spectroscopic ellipsometry</title><author><name sortKey="Paulson, P D" uniqKey="Paulson P">P. D. Paulson</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Institute of Energy Conversion, University of Delaware, Newark, Delaware 19716</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Delaware</region></placeName><wicri:cityArea>Institute of Energy Conversion, University of Delaware, Newark</wicri:cityArea></affiliation></author><author><name sortKey="Birkmire, R W" uniqKey="Birkmire R">R. W. Birkmire</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Institute of Energy Conversion, University of Delaware, Newark, Delaware 19716</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Delaware</region></placeName><wicri:cityArea>Institute of Energy Conversion, University of Delaware, Newark</wicri:cityArea></affiliation></author><author><name sortKey="Shafarman, W N" uniqKey="Shafarman W">W. N. Shafarman</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Institute of Energy Conversion, University of Delaware, Newark, Delaware 19716</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Delaware</region></placeName><wicri:cityArea>Institute of Energy Conversion, University of Delaware, Newark</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0315257</idno><date when="2003-07-15">2003-07-15</date><idno type="stanalyst">PASCAL 03-0315257 AIP</idno><idno type="RBID">Pascal:03-0315257</idno><idno type="wicri:Area/Main/Corpus">00D023</idno><idno type="wicri:Area/Main/Repository">00C167</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Copper compounds</term><term>Ellipsometry</term><term>Experimental study</term><term>Gallium compounds</term><term>Indium compounds</term><term>Infrared spectra</term><term>Refractive index</term><term>Semiconductor thin films</term><term>Surface topography</term><term>Ternary semiconductors</term><term>Ultraviolet spectra</term><term>Vacuum deposited coatings</term><term>Visible spectra</term><term>XRD</term><term>extinction coefficients</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7866L</term><term>7820C</term><term>0760F</term><term>7840F</term><term>6855J</term><term>7830H</term><term>Etude expérimentale</term><term>Cuivre composé</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur ternaire</term><term>Couche mince semiconductrice</term><term>Diffraction RX</term><term>Ellipsométrie</term><term>Indice réfraction</term><term>Revêtement déposé sous vide</term><term>Spectre visible</term><term>Spectre IR</term><term>Spectre UV</term><term>Topographie surface</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Optical constants of polycrystalline thin film CuIn<sub>1-x</sub>Ga<sub>x</sub>Se<sub>2</sub> alloys with Ga/(Ga+In) ratios from 0 to 1 have been determined by spectroscopic ellipsometry over an energy range of 0.75-4.6 eV. CuIn<sub>1-x</sub>Ga<sub>x</sub>Se<sub>2</sub> films were deposited by simultaneous thermal evaporation of elemental copper, indium, gallium and selenium. X-ray diffraction measurements show that the CuIn<sub>1-x</sub>Ga<sub>x</sub>Se<sub>2</sub> films are single phase. Due to their high surface roughness, the films are generally not suitable for ellipsometer measurements. A method is presented in which spectroscopic ellipsometer measurements were carried out on the reverse side of the CuIn<sub>1-x</sub>Ga<sub>x</sub>Se<sub>2</sub> films immediately after peeling them from Mo-coated soda lime glass substrates. A detailed description of multilayer optical modeling of ellipsometric data, generic to ternary chalcopyrite films, is presented. Accurate values of the refractive index and extinction coefficient were obtained and the effects of varying Ga concentrations on the electronic transitions are presented. © 2003 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>94</s2></fA05><fA06><s2>2</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Optical characterization of CuIn<sub>1-x</sub>Ga<sub>x</sub>Se<sub>2</sub> alloy thin films by spectroscopic ellipsometry</s1></fA08><fA11 i1="01" i2="1"><s1>PAULSON (P. D.)</s1></fA11><fA11 i1="02" i2="1"><s1>BIRKMIRE (R. W.)</s1></fA11><fA11 i1="03" i2="1"><s1>SHAFARMAN (W. N.)</s1></fA11><fA14 i1="01"><s1>Institute of Energy Conversion, University of Delaware, Newark, Delaware 19716</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA20><s1>879-888</s1></fA20><fA21><s1>2003-07-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2003 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0315257</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Optical constants of polycrystalline thin film CuIn<sub>1-x</sub>Ga<sub>x</sub>Se<sub>2</sub> alloys with Ga/(Ga+In) ratios from 0 to 1 have been determined by spectroscopic ellipsometry over an energy range of 0.75-4.6 eV. CuIn<sub>1-x</sub>Ga<sub>x</sub>Se<sub>2</sub> films were deposited by simultaneous thermal evaporation of elemental copper, indium, gallium and selenium. X-ray diffraction measurements show that the CuIn<sub>1-x</sub>Ga<sub>x</sub>Se<sub>2</sub> films are single phase. Due to their high surface roughness, the films are generally not suitable for ellipsometer measurements. A method is presented in which spectroscopic ellipsometer measurements were carried out on the reverse side of the CuIn<sub>1-x</sub>Ga<sub>x</sub>Se<sub>2</sub> films immediately after peeling them from Mo-coated soda lime glass substrates. A detailed description of multilayer optical modeling of ellipsometric data, generic to ternary chalcopyrite films, is presented. 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